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power management & multimarket data sheet revision 1.2, 2013-11-26 final ESD300-B1-02LRH low clamping & low capacitanc e esd/surge protection diode ESD300-B1-02LRH tvs diode transient voltage suppressor diodes
ESD300-B1-02LRH final data sheet 2 revision 1.2, 2013-11-26 trademarks of infineon technologies ag aurix?, bluemoon?, c166?, ca npak?, cipos?, cipurse?, comn eon?, econopack?, coolmos?, coolset?, corecontrol?, crossave?, dave?, easypim?, econobri dge?, econodual?, econopim?, eicedriver?, eupec?, fcos?, hitfe t?, hybridpack?, i2rf?, isoface?, isopack?, mipaq?, modstack?, my-d?, novalithic?, omnitune?, optimos?, origa?, primarion?, primepack?, primestack?, pr o-sil?, profet?, rasic?, re versave?, satric?, sieget?, sindrion?, sipmos?, smarti?, smartlew is?, solid flash?, tempfet?, thinq!?, trenchstop?, tricore?, x-go ld?, x-pmu?, xmm?, xposys?. other trademarks advance design system? (ads) of agilent te chnologies, amba?, arm?, multi-ice?, keil?, primecell?, realview?, thumb?, vision? of arm limited, uk. autosar? is licensed by autosar development partnership. bluetooth? of bluetooth sig inc. cat-iq? of dect forum. colossus?, firstgps? of trimble navigation ltd. emv? of emvc o, llc (visa holdings in c.). epcos? of epcos ag. flexgo? of microsoft corp oration. flexray? is licensed by flexray consortium. hyperterminal? of hilgraeve incorporated. iec? of commission electrot echnique internationale. irda? of infrared data association corporation. iso? of international organization for standardization. matlab? of mathworks, inc. maxim? of maxim integrated products, inc. microtec?, nucleus? of mentor graphics corporation. mifare? of nx p. mipi? of mipi alliance, inc. mips? of mips technologies, inc., usa. murata? of murata manufacturing co., microwave offi ce? (mwo) of applied wave research inc., omnivision? of omnivision technologies, inc. open wave? openwave systems inc. red hat? red hat, inc. rfmd? rf micro devices, inc. sirius? of sirius sate llite radio inc. solaris? of sun microsystems, inc. spansion? of spansion llc ltd. symbian? of sy mbian software limited. taiyo yuden? of taiyo yuden co. teaklite? of ceva, inc. t ektronix? of tektroni x inc. toko? of toko kabushiki kaisha ta. unix? of x/open company limited. verilog?, palladium? of cadence design systems, inc. vlynq? of texas instruments inco rporated. vxworks?, wind river? of wind river systems, inc. zetex? of diodes zetex limited. last trademarks update 2010-10-26 revision history: re vision 1.1, 2013-06-17 page or item subjects (major changes since previous revision) revision 1.2, 2013-11-26 4 update of figure 2-1)
ESD300-B1-02LRH low clamping & low capacitance esd/surge protection diode final data sheet 3 revision 1.2, 2013-11-26 1 low clamping & low capacita nce esd/surge protection diode 1.1 features ? extremely high esd and surge protection ? iec61000-4-2 (esd): 30 kv (air/contact discharge) ? iec61000-4-5 (surge): 18 a (8/20 s) ? low clamping voltage v cl < 8 v (8 kv contact) ? maximum peak pulse power p pp =260w (8/20 s) ? extremely low dynamic resistance: r dyn =0.23 ? typ. ? supports applications with signal voltage 3.3 v max. ? line capacitance: c l = typ. 1.2 pf ? package tslp-2-17 compatible to sod882d leadless ultra small surface-mounted device (smd) ? size 1 mm x 0.6 mm x 0.39 mm (0402) 1.2 application examples ? reliable esd and surge protection of highly suscepti ble ic/asics in computers and peripherals, audio, headset, human digital interfaces, video equipment, cellular handsets and accessories and portable electronics ? dedicated solution to boost esd and surge protection performance in miniaturized modern electronics ? 10/100/1000 ethernet 1.3 product description figure 1-1 pin configurati on and schematic diagram table 1-1 ordering information type package configuration marking code ESD300-B1-02LRH tslp-2-17 1 line, bi-directional s3 configuration _schematic_ diagram.vst.vsd b) schematic diagram a) pin configuration pin 2 pin 1 pin 1 pin 2 tslp-2-17 pin 1 marking
ESD300-B1-02LRH characteristics final data sheet 4 revision 1.2, 2013-11-26 2 characteristics 2.1 maximum ratings attention: stresses above the max. values listed here may cause permanent damage to the device. exposure to absolute maximum rating conditions for extended periods may affect device reliability. maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. 2.2 electrical characteristics at t a = 25 c, unless otherwise specified figure 2-1 definitions of electrical characteristics table 2-1 maximum ratings at t a = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. esd 1) contact discharge air discharge 1) v esd according to iec61000-4-2 ( r = 330 , c = 150 pf discharge network) v esd -30 -30 - - 30 30 kv peak pulse current ( t p = 8/20 s) 2) 2) i pp according to iec61000-4-5 ( t p = 8/20 s) i pp -18 - 18 a peak pulse power ( t p = 8/20 s) 2) p pp - - 260 w operating temperature range t op -55 - 125 c storage temperature t stg -65 - 150 c

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ESD300-B1-02LRH characteristics final data sheet 5 revision 1.2, 2013-11-26 table 2-2 dc characteristics at t a = 25 c, unless otherwise specified parameter symbol values unit note / test condition min. typ. max. reverse working voltage v rwm -3.3 - 3.3 v reverse current i r --100na v r =3.3v table 2-3 rf characteristics at t a = 25 c, unless otherwise specified parameter symbol values unit note / test condition min. typ. max. line capacitance c l -1.21.8pf v r =0v, f =1mhz table 2-4 esd characteristics at t a = 25 c, unless otherwise specified parameter symbol values unit note / test condition min. typ. max. clamping voltage 1) 1) v esd according to iec61000-4-2 ( r =330 ? , c = 150 pf discharge network) v cl -8-v v esd =8kv, t p =30ns contact discharge clamping voltage 2) 2) i pp according to iec61000-4-5 ( t p =8/20 s) v cl - - - 5 8.5 10.5 - - - v t p =8/20s i pp =1a i pp =12a i pp =18a clamping voltage 3) - - 9.5 12.5 - - t p = 100 ns i pp =16a i pp =30a dynamic resistance 3) 3)ansi/esd stm5.5.1 - electrostati c discharge sensitive testing using tr ansmission line pulse (tlp) model. tlp conditions: z 0 =50 ? , t p =100ns, t r=0.6ns, i tlp and v tlp averaging window: t 1 =30ns to t 2 = 60 ns, extraction of dynamic resistance using least squar es fit of tlp characteristic between i tlp1 = 10 a and i tlp2 = 40 a. please refer to application note an210 [1] r dyn -0.23- ?
ESD300-B1-02LRH typical characteristics at t a = 25 c, unless otherwise specified final data sheet 6 revision 1.2, 2013-11-26 3 typical characteristics at t a = 25 c, unless otherwise specified figure 3-1 reverse current: i r = f ( v r ) figure 3-2 line capacitance: c l = f ( v r ), f =1mhz 10 -13 10 -12 10 -11 10 -10 10 -9 10 -8 10 -7 10 -6 -3.5 -3 -2.5 -2 -1.5 -1 -0.5 0 0.5 1 1.5 2 2.5 3 3.5 i r [ma] v r [v] 0 0.5 1 1.5 2 2.5 3 3.5 4 -3.5 -3 -2.5 -2 -1.5 -1 -0.5 0 0.5 1 1.5 2 2.5 3 3.5 c l [pf] v r [v]
ESD300-B1-02LRH typical characteristics at t a = 25 c, unless otherwise specified final data sheet 7 revision 1.2, 2013-11-26 figure 3-3 clamping voltage (tlp): i tlp = f ( v tlp ) according ansi/esd stm5.5.1 - electrostatic discharge sensitivity testing using transmission line pulse (tlp) model. tlp conditions: z 0 =50 ? , t p =100ns, t r =0.6ns, i tlp and v tlp averaging window: t 1 =ns to t 2 = 60 ns, extraction of dynamic resistance using squares fi t to tlp characteristics between i tlp1 = 10 a and i tlp2 = 40 a. please refer to application note an210 [1] -60 -50 -40 -30 -20 -10 0 10 20 30 40 50 60 -20 -15 -10 -5 0 5 10 15 20 -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 30 i tlp [a] equivalent v iec [kv] v tlp [v] ESD300-B1-02LRH r dyn r dyn = 0.223 r dyn = 0.227
ESD300-B1-02LRH typical characteristics at t a = 25 c, unless otherwise specified final data sheet 8 revision 1.2, 2013-11-26 figure 3-4 pulse current (iec61000-4-5) versus clamping voltage: i pp = f ( v cl ) -25 -20 -15 -10 -5 0 5 10 15 20 25 -15 -10 -5 0 5 10 15 i pp [a] v cl [v] ESD300-B1-02LRH r dyn r dyn = 0.3 r dyn = 0.3
ESD300-B1-02LRH typical characteristics at t a = 25 c, unless otherwise specified final data sheet 9 revision 1.2, 2013-11-26 figure 3-5 iec61000-4-2 : v cl = f ( t ), 8 kv positive pulse from pin 1 to pin 2 figure 3-6 iec61000-4-2 : v cl = f ( t ), 8 kv negative pulse from pin 1 to pin 2 -20 -10 0 10 20 30 40 50 60 70 -50 0 50 100 150 200 250 300 350 400 450 v cl [v] t p [ns] scope: 6 ghz, 20 gs/s v cl-max-peak = 64 v v cl-30ns-peak = 8 v -70 -60 -50 -40 -30 -20 -10 0 10 20 -50 0 50 100 150 200 250 300 350 400 450 v cl [v] t p [ns] scope: 6 ghz, 20 gs/s v cl-max-peak = -63 v v cl-30ns-peak = -8 v
ESD300-B1-02LRH typical characteristics at t a = 25 c, unless otherwise specified final data sheet 10 revision 1.2, 2013-11-26 figure 3-7 iec61000-4-2 : v cl = f ( t ), 15 kv positive pulse from pin 1 to pin 2 figure 3-8 iec61000-4-2 : v cl = f ( t ), 15 kv negative pulse from pin 1 to pin 2 -20 0 20 40 60 80 100 -50 0 50 100 150 200 250 300 350 400 450 v cl [v] t p [ns] scope: 6 ghz, 20 gs/s v cl-max-peak = 92 v v cl-30ns-peak = 11 v -100 -80 -60 -40 -20 0 20 -50 0 50 100 150 200 250 300 350 400 450 v cl [v] t p [ns] scope: 6 ghz, 20 gs/s v cl-max-peak = -91 v v cl-30ns-peak = -10 v
ESD300-B1-02LRH package information final data sheet 11 revision 1.2, 2013-11-26 4 package information 4.1 tslp-2-17 figure 4-1 tslp-2-17 package outline (dimension in mm) figure 4-2 tslp-2-17 footprint (dimension in mm) figure 4-3 tslp-2-17 packing (dimension in mm) figure 4-4 tslp-2-17 marking (example) tslp-2-7-po v02 0.05 0.6 1 2 0.05 0.65 0.035 0.25 1) 1 0.05 0.05 max. +0.01 0.39 -0.03 1) dimension applies to plated terminal cathode marking 1) 0.035 0.5 bottom view top view tslp-2-7-fp v0 1 0.45 0.275 0.275 0.375 0.925 copper solder mask stencil aperture s 0.35 1 0.6 0.35 0.3 tslp-2-7-tp v03 0.76 4 1.16 0.5 orientation marking 8 type code cathode marking tslp-2-18-mk v01 12
ESD300-B1-02LRH references final data sheet 12 revision 1.2, 2013-11-26 references [1] infineon ag - application note an210: effective esd protection design at system level using vf-tlp characterization methodology
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